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TSM05N03CW RPG


TSM05N03CW RPG

Part NumberTSM05N03CW RPG

Manufacturer

Description

Datasheet

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TSM05N03CW RPG - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package2500
ManufacturerTaiwan Semiconductor Corporation
Series-
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs60mOhm @ 5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds555pF @ 15V
FET Feature-
Power Dissipation (Max)3W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

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